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IMAGE SENSOR
CCD area image sensor
S8844-0909
512 x 512 pixels, Back-thinned FFT-CCD
S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and low dark current when operated in MPP (Multi Pinned-Phase) mode. Spectral response characteristics are very stable making high-precision photometry possible. A one-stage thermoelectric cooler is built into the package along with the CCD chip. The CCD operating temperature can be maintained at -10 C when used at room temperature (25 C). S8844-0909 is identical performance and pin compatible with S7171-0909. S8844-0909 has wider FOV (Field of View) than S7171-0909 because of window structure.
Features
Applications
l Number of active pixels: 512 x 512 l Greater than 90 % quantum efficiency at peak sensitivity wavelength l Wide spectral response range l Low noise l Wide dynamic range l MPP operation l Built-in one-stage thermoelectric cooler
l Scientific measurement l Semiconductor inspection l UV imaging l Bio-photon observation l DNA sequencer
s Specifications
Type No. S8844-0909 Cooling One-stage TE-cooled Number of total pixels 532 x 520 Number of active pixels 512 x 512 Active area [m m (H ) x m m (V)] 12.288 x 12.288
s General ratings
Parameter Pixel size Number of active pixels Vertical clock phase Horizontal clock phase Output circuit Package Built-in cooler Window *1: Windowless type is available on custom order. Specifications 24 (H) x 24 (V) m 512 (H) x 512 (V) 2 phase 2 phase One-stage MOSFET source follower 24 pin ceramic DIP (refer to dimensional outlines) One-stage AR coated sapphire glass *1
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. -
S8844-0909
Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 11.5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 20 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 22 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V V V V V V V
s Electrical characteristics (Ta=25 C)
Parameter Symbol Min. Signal output frequency fc Vertical shift register capacitance CP1V, CP2V Horizontal shift register capacitance CP1H, CP2H Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Charge transfer efficiency *2 CTE 0.99995 DC output level *3 Vout 12 Output impedance *3 Zo Power consumption *3 *4 P *2: Charge transfer efficiency per pixel, measured at half of the full well capacity. *3: The values depend on the load resistance. (VOD=20 V, Load resistance=22 k) *4: Power consumption of the on-chip amplifier. Typ. 6,400 120 7 7 150 0.99999 15 3 15 Max. 1 18 Unit MHz pF pF pF pF pF V k mW
2
CCD area image sensor
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter Saturation output voltage Full well capacity CCD node sensitivity Dark current *5 (MPP mode) 25 C 0 C Vertical Horizontal Symbol Vsat Fw Sv DS Min. 150,000 300,000 1.8 Typ. Fw x Sv 300,000 600,000 2.2 4,000
S8844-0909
Max. 12,000 600 16 10 Unit V e
-
V/e
-
200 Readout noise *6 Nr 8 Line binning 18,750 75,000 7 Dynamic range * DR Area scanning 9,375 37,500 Photo response non-uniformity *8 PRNU 3 Spectral response range 200 to 1100 *5: Dark current nearly doubles for every 5 to 7 C increase in temperature. *6: Operating frequency is 150 kHz. *7: Dynamic Range (DR) = Full well/Readout noise *8: Measured at half of the full well capacity. Fixed pattern noise (peak to peak) x 100 Photo Response Non-Uniformity (PRNU) [%] = Signal
e /pixel/s e rms % nm
-
s Spectral response (without window) *9
100 90 (Typ. Ta=25 C) BACK-THINNED
s Spectral transmittance characteristic of window material
100 90 80 (Typ. Ta=25 C)
QUANTUM EFFICIENCY (%)
80 70 60 50 40 30 20 10 0 200 400 600 800 1000 1200 FRONT-SIDED (UV COAT) FRONT-SIDED
TRANSMITTANCE (%)
70 60 50 40 30 20 10
AR COATED SAPPHIRE
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
WAVELENGTH (nm)
KMPDB0058EA
WAVELENGTH (nm)
KMPDB0226EA
*9: Spectral response with sapphire window is decreased by the transmittance
3
CCD area image sensor
s Dark current vs. temperature
10000 (Typ.)
S8844-0909
DARK CURRENT (e-/pixel/s)
1000
100
10
1
0.1 -50
-40
-30
-20
-10
0
10
20
30
TEMPERATURE (C)
KMPDB0037EB
s Device structure (Conceptual drawing of top view)
THINNING
22
23
21
20
15
14
13
4 BEVEL THINNING
V
24
1
2
5 4 3 2 12345
H
12
11
3
4
5
8
9
10
V=512 H=512
4 BLANK
512 SIGNAL OUT
4 BLANK
8 BEVEL
4 BEVEL
KMPDC0075EA
4
4 BEVEL
512 SIGNAL OUT
CCD area image sensor
s Timing chart Area scanning 1 (low dark current mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..519 520512 + 8 (BEVEL)
S8844-0909
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D12, S1..S512, D13..D17
D19
D20
KMPDC0119EA
Parameter Symbol Remark Pulse width Tpwv *10 P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *10 P1H, P2H Rise and fall time Tprh, pfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *10: Symmetrical clock pulses should be overlapped at 50 % of maximum amplitude.
Min. 6 200 500 10 500 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
5
CCD area image sensor
S8844-0909
Area scanning 2 (large full well mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..519 520512 + 8 (BEVEL)
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D12, S1..S512, D13..D17
D19
D20
KMPDC0120EA
Parameter Symbol Remark Pulse width Tpwv *11 P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *11 P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *11: Symmetrical clock pulses should be overlapped at 50 % of maximum amplitude.
Min. 6 200 500 10 500 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
6
CCD area image sensor
s Dimensional outline (unit: mm)
SAPPHIRE WINDOW 31.0 SAPPHIRE LIGHT-SHIELDED AREA 17.5 ACTIVE AREA 12.288
S8844-0909
12.288
22.4
0.5 20.0 16.5 4.0 19.0
2.54 34.0 38.0 42.0 50.0 SAPPHIRE WINDOW 1.0 4.8 6.4 7.0 7.1 TE-COOLER INDEX MARK PIN No. 1
3.0
2.54 27.94
0.5 KMPDA0163EA
KMPDA0163EA
s Pin connections
Pin No. Symbol Function Remark (standard operation) +12 V RL=10 k to 100 k +20 V +3 V Same timing as P2H
1 RD Reset drain 2 OS Output transistor source 3 OD Output transistor drain 4 OG Output gate 5 SG Summing gate 6 7 8 P2H CCD horizontal register clock-2 9 P1H CCD horizontal register clock-1 10 IG2H Test point (horizontal input gate-2) 0V 11 IG1H Test point (horizontal input gate-1) 0V 12 ISH Test point (horizontal input source) Connect to RD 13 TG *12 Transfer gate Same timing as P2V 14 P2V CCD vertical register clock-2 15 P1V CCD vertical register clock-1 16 Th1 Thermistor 17 Th2 Thermistor 18 PTE-cooler (-) 19 P+ TE-cooler (+) 20 SS Substrate (GND) GND 21 ISV Test point (vertical input source) Connect to RD 22 IG2V Test point (vertical input gate-2) 0V 23 IG1V Test point (vertical input gate-1) 0V 24 RG Reset gate *12: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V.
22.9
7
CCD area image sensor
s Specifications of built-in TE-cooler
S8844-0909
Parameter Symbol Condition Typ. Unit Internal resistance Rint Ta=25 C 2.1 Maximum current *13 Imax Tc *14=Th *15=25 C 2.0 A Maximum voltage Vmax Tc *14=Th *15=25 C 4.2 V Maximum heat absorption *16 Qmax 4.5 W Maximum temperature of heat radiating side 70 C *13: Maximum current Imax: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *14: Temperature of the cooling side of thermoelectric cooler. *15: Temperature of the heat radiating side of thermoelectric cooler. *16: Maximum heat absorption Qmax. This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit.
6 (Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 5 20 30
VOLTAGE (V)
4
10
3
0
2
-10
1
-20
0
0
0.5
1.0
1.5
-30 2.0
CURRENT (A)
KMPDB0180EA
s Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 x expB (1 / T1 - 1 / T2) R1: Resistance at absolute temperature T1 (K) R2: Resistance at absolute temperature T2 (K) B: B constant (K)
1 M (Typ. Ta=25 C)
RESISTANCE
The characteristics of the thermistor used are as follows. R (298K) = 10 k B (298K / 323K) = 3450 K
CCD TEMPERATURE (C)
100 k
10 k 220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EA
8
CCD area image sensor
s Precaution for use (Electrostatic countermeasures)
S8844-0909
q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
s Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1056E04 Feb. 2006 DN
9

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